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1 MRF5S21150 MRF5S21150r3 MRF5S21150s MRF5S21150sr3 motorola rf device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for w?cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n ? p c s / c e l l u l a r r a d i o a n d w l l applications. ? typical 2?carrier w?cdma performance for v dd = 28 volts, i dq = 1300 ma, f1 = 2135 mhz, f2 = 2145 mhz, channel bandwidth = 3.84 mhz, adjacent channels measured over 3.84 mhz bw @ f1 ? 5 mhz and f2 +5 mhz, distortion products measured over a 3.84 mhz bw @ f1 ?10 mhz and f2 +10 mhz, peak/avg. = 8.5 db @ 0.01% probability on ccdf. output power ? 33 watts avg. power gain ? 12.5 db efficiency ? 25% im3 ? ?37 dbc acpr ? ?39 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 2140 mhz, 125 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? qualified up to a maximum of 32 v dd operation ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 350 2 watts w/ c storage temperature range t stg ?65 to +200 c operating junction temperature t j 200 c cw operation cw 125 watts note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF5S21150/d semiconductor technical data 2170 mhz, 33 w avg., 2 x w?cdma, 28 v lateral n?channel rf power mosfets case 465c?02, style 1 ni?880s MRF5S21150s case 465b?03, style 1 ni?880 MRF5S21150 ? motorola, inc. 2002 rev 0
MRF5S21150 MRF5S21150r3 MRF5S21150s MRF5S21150sr3 2 motorola rf device data thermal characteristics characteristic symbol max unit thermal resistance, junction to case case temperature 80 c, 125 w cw case temperature 80 c, 33 w cw r jc 0.52 0.56 c/w electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 360 adc) v gs(th) 2.5 ? 3.5 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1300 madc) v gs(q) ? 3.7 ? vdc drain?source on?voltage (v gs = 10 vdc, i d = 3.6 adc) v ds(on) ? 0.26 0.3 vdc forward transconductance (v ds = 10 vdc, i d = 3.6 adc) g fs ? 9 ? s dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 3.2 ? pf functional tests (in motorola test fixture, 50 ohm system) 2?carrier w?cdma, 3.84 mhz channel bandwidth carriers, acpr and im3 measured in 3.84 mhz bandwidth. peak/avg. = 8.5 db @ 0.01% probability on ccdf. common?source amplifier power gain (v dd = 28 vdc, p out = 33 w avg., i dq = 1300 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 11 12.5 ? db drain efficiency (v dd = 28 vdc, p out = 33 w avg., i dq = 1300 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 23 25 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 33 w avg., i dq = 1300 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; im3 measured over 3.84 mhz bw at f1 ?10 mhz and f2 +10 mhz referenced to carrier channel power.) im3 ?37 ?35 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 33 w avg., i dq = 1300 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; acpr measured over 3.84 mhz at f1 ?5 mhz and f2 +5 mhz.) acpr ? ?39 ?37 dbc input return loss (v dd = 28 vdc, p out = 33 w avg., i dq = 1300 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) irl ? ?12 ?9 db (1) part is internally matched both on input and output.
3 MRF5S21150 MRF5S21150r3 MRF5S21150s MRF5S21150sr3 motorola rf device data figure 1. MRF5S21150 test circuit schematic z10, z11 0.709 x 0.083 microstrip z12 0.415 x 1.100 microstrip z13 0.874 x 0.083 microstrip z14 1.182 x 0.083 microstrip z15, z16 0.070 x 0.220 microstrip z17 0.430 x 0.083 microstrip pcb taconic tlx8, 0.76 mm, r = 2.55 z1 0.500 x 0.083 microstrip z2 0.505 x 0.083 microstrip z3 0.536 x 0.083 microstrip z4 0.776 x 0.083 microstrip z5 0.119 x 1.024 microstrip z6, z7 0.749 x 0.083 microstrip z8 0.117 x 1.024 microstrip z9 0.117 x 1.100 microstrip table 1. MRF5S21150 test circuit component designations and values part description value, p/n or dwg manufacturer c1 22 f, 35 v tantalum capacitor taje226m035r avx c2, c6, c8, c9, c13, c18, c19 6.8 pf 100b chip capacitors 100b6r8cw atc c3,c4 1.8 pf 100b chip capacitors 100b1r8bw atc c5, c7, c10, c14 220 nf chip capacitors (1812) 1812y224kxa vishay?vitramon c11, c12, c15, c16 10 f, 35 v tantalum capacitors 293d1106x9035d vishay?sprague c17 0.3 pf chip capacitor 100b0r3bw atc c20 470 f, 63 v electrolytic capacitor, radial 13661471 philips r1, r2 10 k , 1/4 w chip resistors
MRF5S21150 MRF5S21150r3 MRF5S21150s MRF5S21150sr3 4 motorola rf device data figure 2. MRF5S21150 test circuit component layout MRF5S21150 rev 0 cut out area
5 MRF5S21150 MRF5S21150r3 MRF5S21150s MRF5S21150sr3 motorola rf device data typical characteristics figure 3. 2?carrier w?cdma broadband performance figure 4. two?tone power gain versus output power figure 5. third order intermodulation distortion versus output power figure 6. intermodulation distortion products versus tone spacing figure 7. pulse cw output power versus input power
MRF5S21150 MRF5S21150r3 MRF5S21150s MRF5S21150sr3 6 motorola rf device data figure 8. 2?carrier w?cdma acpr, im3, power gain and drain efficiency versus output power figure 9. 2-carrier w-cdma spectrum figure 10. ccdf w?cdma 3gpp, test model 1, 64 dpch, 67% clipping, single carrier test signal figure 11. mtbf factor versus junction temperature
7 MRF5S21150 MRF5S21150r3 MRF5S21150s MRF5S21150sr3 motorola rf device data figure 12. series equivalent input and output impedance f mhz z source ? z load ? 2080 2110 2140 1.02 ? j2.94 1.16 ? j2.46 1.09 ? j2.51 3.05 ? j9.66 3.97 ? j10.31 4.70 ? j11.03 ? 2170 2200 1.02 ? j2.55 1.16 ? j2.58 5.45 ? j12.41 6.18 ? j13.04 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground.

MRF5S21150 MRF5S21150r3 MRF5S21150s MRF5S21150sr3 8 motorola rf device data notes
9 MRF5S21150 MRF5S21150r3 MRF5S21150s MRF5S21150sr3 motorola rf device data notes
MRF5S21150 MRF5S21150r3 MRF5S21150s MRF5S21150sr3 10 motorola rf device data notes
11 MRF5S21150 MRF5S21150r3 MRF5S21150s MRF5S21150sr3 motorola rf device data package dimensions case 465b?03 issue b ni?880 MRF5S21150 d g k c e h f q 2x b b (flange) aa (flange) t n (lid) m (insulator) s (insulator) r (lid) !!! case 465c?02 issue a ni?880s MRF5S21150s d k c e h f b b (flange) aa (flange) t n (lid) m (insulator) r (lid) s (insulator) !!!
MRF5S21150 MRF5S21150r3 MRF5S21150s MRF5S21150sr3 12 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation, or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? param eters can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for e ach customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola p roducts are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purch ase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employe es, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly o r indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent reg arding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent & trademark office. all other product or service names are the property of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola, inc. 2002. how to reach us: usa/europe/locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 1?303?675?2140 or 1?800?441?2447 japan : motorola japan ltd.; sps, technical information center, 3?20?1, minami?az abu. minato?ku, tokyo 106?8573 japan. 8 1?3?3440?3569 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 da i king street, tai po industrial estate, tai po, n.t. hong kon g. 852?26668334 technical information center: 1?800?521?6274 home page : http://www .motorola.com/semiconductors/ MRF5S21150/d ?

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